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STP3NK50Z

Electrical characteristics

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The built-in back-to-back Zener diodes have been specifically designed to enhance not only

the device’s ESD capability, but also to make them capable of safely absorbing any voltage

transients that may occasionally be applied from gate to source. In this respect, the Zener

voltage is appropriate to achieve efficient and cost-effective protection of device integrity.

The integrated Zener diodes thus eliminate the need for external components.

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

-

2.3

A

(1)

1.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Source-drain current (pulsed)

-

9.2

A

(2)

2.

Pulse width limited by safe operating area

Forward on voltage

-

1.6

V

Reverse recovery time

di/dt = 100 A/µs,

(see Figure 17)

-

250

ns

Reverse recovery charge

-

745

nC

Reverse recovery current

-

6

A

Reverse recovery time

di/dt=100 A/µs,

(see Figure 17)

-

300

ns

Reverse recovery charge

-

960

nC

Reverse recovery current

-

6.2

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min

Typ.

Max.

Unit

30

-

-

V