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FE3A датащи(PDF) 1 Page - Diotec Semiconductor

номер детали FE3A
подробное описание детали  Superfast Recovery Rectifier Diodes
PDF  2 Pages
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производитель  DIOTEC [Diotec Semiconductor]
домашняя страница  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

FE3A датащи(HTML) 1 Page - Diotec Semiconductor

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FE3A ... FE3G
FE3A ... FE3G
Superfast Recovery Rectifier Diodes
Gleichrichterdioden mit superschnellem Sperrverzug
IFAV = 3 A
VF
< 0.98...1.3 V
Tjmax = 175°C
VRRM = 50...400 V
IFSM = 125/135 A
trr
< 50 ns
Version 2015-12-21
~DO-201
Dimensions - Maße [mm]
Typical Applications
Rectification of higher frequencies,
High speed switching
Commercial grade 1)
Typische Anwendungen
Gleichrichtung hoher Frequenzen
Schnelles Schalten
Standardausführung 1)
Features
High forward surge current
Compliant to RoHS, REACH,
Conflict Minerals 1)
Besonderheiten
Hohe Stoßstromfestigkeit
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanical Data 1)
Mechanische Daten 1
)
Taped in ammo pack
1700
Gegurtet in Ammo-Pack
Weight approx.
1.0 g
Gewicht ca.
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL N/A
Maximum ratings 2)
Grenzwerte 2)
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
FE3A
50
50
FE3B
100
100
FE3D
200
200
FE3G
400
400
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 75°C
IFAV
3 A 3)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
30 A 3)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
125/135 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
78 A2s
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+175°C
-50...+175°C
1
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2
Tj = 25°C unless otherwise specified – Tj = 25°C wenn nicht anders angegeben
3
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
Ø 1.2±0.05
Ø 4.5+0.1
-0.3
Pb
RoHS


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