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IPF06N03LA датащи(PDF) 2 Page - Infineon Technologies AG

номер детали IPF06N03LA
подробное описание детали  OptiMOS 2 Power-Transistor
PDF  11 Pages
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производитель  INFINEON [Infineon Technologies AG]
домашняя страница  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPF06N03LA датащи(HTML) 2 Page - Infineon Technologies AG

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IPD06N03LA
IPF06N03LA
IPS06N03LA
IPU06N03LA
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R thJC
-
-
1.8
K/W
SMD version, device on PCB
R thJA
minimal footprint
-
-
75
6 cm
2 cooling area5)
--
50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
25
-
-
V
Gate threshold voltage
V GS(th)
V DS=V GS, I D=40 µA
1.2
1.6
2
Zero gate voltage drain current
I DSS
V DS=25 V, V GS=0 V,
T j=25 °C
-
0.1
1
µA
V DS=25 V, V GS=0 V,
T j=125 °C
-
10
100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=30 A
-
7.7
9.6
m
V GS=4.5 V, I D=30 A,
SMD version
-
7.5
9.4
V GS=10 V, I D=30 A
-
5.0
5.9
V GS=10 V, I D=30 A,
SMD version
-
4.8
5.7
Gate resistance
R G
-1
-
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
29
59
-
S
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Values
2) Current is limited by bondwire; with anR
thJC=1.8 K/W the chip is able to carry 94 A.
3) See figure 3
4) T
j,max=150 °C and duty cycle D <0.25 for V GS<-5 V
1) J-STD20 and JESD22
Rev. 1.7
page 2
2004-05-19



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