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IPF06N03LA датащи(PDF) 2 Page - Infineon Technologies AG |
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IPF06N03LA датащи(HTML) 2 Page - Infineon Technologies AG |
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2 / 11 page ![]() IPD06N03LA IPF06N03LA IPS06N03LA IPU06N03LA Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 1.8 K/W SMD version, device on PCB R thJA minimal footprint - - 75 6 cm 2 cooling area5) -- 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 25 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=40 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=25 V, V GS=0 V, T j=25 °C - 0.1 1 µA V DS=25 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=30 A - 7.7 9.6 m Ω V GS=4.5 V, I D=30 A, SMD version - 7.5 9.4 V GS=10 V, I D=30 A - 5.0 5.9 V GS=10 V, I D=30 A, SMD version - 4.8 5.7 Gate resistance R G -1 - Ω Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=30 A 29 59 - S 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Values 2) Current is limited by bondwire; with anR thJC=1.8 K/W the chip is able to carry 94 A. 3) See figure 3 4) T j,max=150 °C and duty cycle D <0.25 for V GS<-5 V 1) J-STD20 and JESD22 Rev. 1.7 page 2 2004-05-19 |
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