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STD10P10F6 датащи(PDF) 3 Page - STMicroelectronics |
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STD10P10F6 датащи(HTML) 3 Page - STMicroelectronics |
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3 / 15 page ![]() STD10P10F6 Electrical ratings DocID026365 Rev 2 3/15 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 100 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 10 A ID Drain current (continuous) at TC = 100 °C 7.5 A IDM (1) Drain current (pulsed) 40 A PTOT Total dissipation at TC = 25 °C 40 W Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature 175 °C Notes: (1)Pulse width limited by safe operating area Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 3.75 °C/W Rthj-pcb(1) Thermal resistance junction-pcb max 50 °C/W Notes: (1)When mounted on 1 inch2 FR-4, 2 Oz copper board For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. |
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