STTH30R02DJF datasheet(3/9 Pages) STMICROELECTRONICS

номер детали	STTH30R02DJF

подробное описание детали	Ultrafast recovery diode high efficiency

PDF	9 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

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STTH30R02DJF

Characteristics

Doc ID 022761 Rev 1

3/9

Table 5.

Recovery characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

trr

Reverse recovery time

Tj = 25 °C

IF = 1 A

Vr = 30 V

dIF/dt = 100 A/µs

IF = 1 A

Vr = 30 V

dIF/dt = 50 A/µs

IRM

Reverse recovery current

Tj = 125 °C

IF = 30 A,

dIF/dt = - 200 A/µs,

VCC = 160 V

6.0

8.0

Sfactor

Reverse recovery

softness factor

0.3

Qrr

Reverse recovery charges

140

Table 6.

Turn-on switching characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

tfr

Forward recovery time

Tj = 25 °C

IF = 30 A

dIF/dt = 200 A/µs

VFR = 1.3 V

300

VFP

Forward recovery voltage

2.3

3.5

Figure 1.

Average forward power dissipation

versus average forward current

Figure 2.

Forward voltage drop versus

forward current

PF(AV)(W)

δ=0.05

=0.1

=0.2

=0.5

δ=Tp/T

IF(AV)(A)

IFM(A)

0.1

1.0

10.0

100.0

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

Tj=150 °C

(Maximum values)

Tj=150 °C

(Typical values)

Tj=25 °C

(Maximum values)

VFM(V)

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