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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STS7P4LLF6 датащи(PDF) 1 Page - STMicroelectronics |
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STS7P4LLF6 датащи(HTML) 1 Page - STMicroelectronics |
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1 / 13 page  March 2015 DocID025619 Rev 2 1/13 This is information on a product in full production. www.st.com STS7P4LLF6 P- channel 40 V, 0.0175 Ω typ.,7 A, STripFET™ F6 Power MOSFET in an SO-8 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STS7P4LLF6 40 V 0.0205 Ω 7 A • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. Table 1: Device summary Order code Marking Package Packaging STS7P4LLF6 7K4L SO-8 Tape and reel |
Аналогичный номер детали - STS7P4LLF6 |
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Аналогичное описание - STS7P4LLF6 |
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