STPSC6H065DI datasheet(1/14 Pages) STMICROELECTRONICS

номер детали	STPSC6H065DI

подробное описание детали	650 V power Schottky silicon carbide diode

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производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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This is information on a product in full production.

July 2015

DocID023247 Rev 6

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STPSC6H065

650 V power Schottky silicon carbide diode

Datasheet

- production data

Features

• No reverse recovery charge in application

current range

• Switching behavior independent of

temperature

• Dedicated to PFC applications

• High forward surge capability

• Insulated package TO-220AC Ins:

– Insulated voltage: 2500 V rms

– Typical package capacitance: 7 pF

Description

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide band gap material

allows the design of a Schottky diode structure

with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature.

Especially suited for use in PFC applications, this

ST SiC diode will boost the performance in hard

switching conditions. Its high forward surge

capability ensures a good robustness during

transient phases.

Table 1. Device summary

Symbol

Value

IF(AV)

6 A

VRRM

650 V

Tj (max)

175 °C

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Аналогичный номер детали - STPSC6H065DI

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STMicroelectronics	STPSC6H065DLF	384Kb / 12P	650 V power Schottky silicon carbide diode March 2021

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Аналогичное описание - STPSC6H065DI

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STPSC10H065D	122Kb / 9P	650 V power Schottky silicon carbide diode 10-Oct-2012
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	STPSC8H065D	228Kb / 14P	650 V power Schottky silicon carbide diode 07-Jan-2014
	STPSC4H065D	178Kb / 10P	650 V power Schottky silicon carbide diode November 2013 Rev 3
	STPSC16H065C	170Kb / 8P	650 V power Schottky silicon carbide diode December 2015 Rev 5
	STPSC12H065C	170Kb / 8P	650 V power Schottky silicon carbide diode 10-Dec-2015
	STPSC8H065DLF	383Kb / 12P	650 V power Schottky silicon carbide diode March 2021
	STPSC20065	631Kb / 13P	650 V power Schottky silicon carbide diode July 2017 Rev 2
	STPSC8065	503Kb / 9P	650 V power Schottky silicon carbide diode July 2017 Rev 2
	STPSC4H065DLF	381Kb / 12P	650 V power Schottky silicon carbide diode 31-Mar-2021

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STPSC6H065DI датащи(PDF) 1 Page - STMicroelectronics

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Аналогичный номер детали - STPSC6H065DI

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