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STH320N4F6-2 датащи(PDF) 3 Page - STMicroelectronics

номер детали STH320N4F6-2
подробное описание детали  N-channel 40 V, 1.1 mΩ typ., 200 A, H²PAK-2, H²PAK-6 STripFET™ VI DeepGATE™ Power MOSFET
PDF  19 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STH320N4F6-2 датащи(HTML) 3 Page - STMicroelectronics

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STH320N4F6-2, STH320N4F6-6
Electrical ratings
Doc ID 024221 Rev 1
3/19
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
40
V
VGS
Gate-source voltage
± 20
V
ID
(1)
1.
The value is rated according Rthj-c, current limited by package.
Drain current (continuous) at TC = 25 °C
200
A
ID
(1)
Drain current (continuous) at TC = 100 °C
200
A
IDM
(2)
2.
Pulse is rated according SOA.
Drain current (pulsed)
800
A
PTOT
Total dissipation at TC = 25 °C,
300
W
Derating factor
2
W/°C
IAV
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
160
A
EAS
Single pulse avalanche energy
(starting TJ=25 °C, ID=IAV, VDD=35 V)
1100
mJ
Tstg
Storage temperature
-55 to 175
°C
Tj
Operating junction temperature
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
0.5
°C/W
Rthj-pcb
(1)
1.
When mounted on 1 inch2 FR-4 2 oz Cu.
Thermal resistance junction-pcb max
35
°C/W



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