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STH315N10F7-2 датащи(PDF) 1 Page - STMicroelectronics |
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STH315N10F7-2 датащи(HTML) 1 Page - STMicroelectronics |
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1 / 19 page ![]() This is information on a product in full production. September 2014 DocID025090 Rev 4 1/19 STH315N10F7-2, STH315N10F7-6 Automotive-grade N-channel 100 V, 2.1 m Ω typ., 180 A STripFET™ F7 Power MOSFETs Datasheet - production data Figure 1. Internal schematic diagram Features • Designed for automotive applications and AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 1 TAB 3 2 H PAK-2 2 H PAK-6 2 1 TAB 7 Order codes VDS RDS(on) max. ID STH315N10F7-2 100 V 2.3 m Ω 180 A STH315N10F7-6 Table 1. Device summary Order codes Marking Package Packaging STH315N10F7-2 315N10F7 H2PAK-2 Tape and reel STH315N10F7-6 H2PAK-6 www.st.com |
Аналогичный номер детали - STH315N10F7-2 |
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Аналогичное описание - STH315N10F7-2 |
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