CFY27

Semiconductor Group

2 of 9

Draft D, September 99

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain-source voltage

9V

Drain-gate voltage

11

V

Gate-source voltage (reverse / forward)

- 6... + 0.5

V

Drain current

420

mA

Gate forward current

5mA

RF Input Power, C- and X-Band

1)

+ 20 (tbc.)

dBm

Junction temperature

175

°C

Storage temperature range

- 65... + 175

°C

Total power dissipation

2)

900

mW

Soldering temperature

3)

230

°C

Thermal Resistance

Junction-soldering point

≤ 150 (tbc.)

K/W

Notes.:

3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have

elapsed.