CFY25

Semiconductor Group

2 of 8

Draft D, Sep. 0000

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain-source voltage

5

V

Drain-gate voltage

7

V

Gate-source voltage (reverse / forward)

- 5... + 0.5

V

Drain current

80

mA

Gate forward current

1.5

mA

RF Input Power, C- and X-Band

1)

+ 17

dBm

Junction temperature

175

°C

Storage temperature range

- 65... + 175

°C

Total power dissipation

2)

250

mW

Soldering temperature

3)

230

°C

Thermal Resistance

Junction-soldering point

≤ 410

K/W

Notes.:

≤ 3 V. For V

3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have

elapsed.