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ST25TA64K датащи(PDF) 41 Page - STMicroelectronics |
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ST25TA64K датащи(HTML) 41 Page - STMicroelectronics |
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41 / 45 page ![]() DocID027764 Rev 1 41/45 ST25TA64K Maximum rating 42 9 Maximum rating Stressing the device above the rating listed in Table 52 may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability. Table 52. Absolute maximum ratings Symbol Parameter Min. Max. Unit TA Ambient operating temperature -40 85 °C TSTG, hSTG, tSTG Storage conditions Sawn wafer on UV tape 15 25 °C 6 (1) 1. Counted from ST shipment date. months kept in its original packing form TSTG Storage temperature Sawn Bumped Wafer (kept in its antistatic bag) 15 25 °C Storage time 6 months ICC (2) 2. Based on characterization, not tested in production. Maximum absorbed power = 100 mW @ 7.5 A/m RF supply current AC0 - AC1 - 100 mA VMAX_1 (2) RF input voltage amplitude between AC0 and AC1, GND pad left floating VAC0-VAC1 - 10 V VMAX_2 (2) AC voltage between AC0 and GND, or AC1 and GND VAC0-GND or VAC1-GND -0.5 4.5 V VESD Electrostatic discharge voltage (human body model) (3) 3. AEC-Q100-002 (compliant with JEDEC Std JESD22-A114A, C1 = 100 pF, R1 = 1500 Ω, R2 = 500 Ω) AC0-AC1 - 1000 V |
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