BTS730 datasheet(3/7 Pages) INFINEON

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BTS730

Electrical Characteristics

at T C = 25 °C, Vbb = 12 V, unless otherwise specified. CBootstrap = 22nF

Parameter

Symbol

Values

Unit

min.

typ.

max.

On-state resistance

R ON

70 m

Ω

I L=3A, V bb=12V

Operating voltage

V bb

5.9

16.9

2) V

T C = -40 ...+150°C

Nominal current, calculated value

I L-ISO

- A

ISO-standard:Vbb-VOUT ≤0.5V, TC = 85°C

Load current limit

I LLim

-20

- A

V bb-V OUT> 1V, TC = -40 ...+150°C

Undervoltage shutdown

V bb(LOW)

4.2

5.4 V

I L = 3A, TC = -40 ...+150°C

Overvoltage shutdown

V bb(HI)

19 V

I L = 3A, TC = -40 ...+150°C

Max.output voltage (RMS)

V RMSmax

14 V

I L = 3A, V bb > 12 V

T C = -40 ...+150°C

Reference voltage

V REF

23 V

I REF= 10mA, TC = -40 ...+150°C

Reference current

I REF

150

pin 18 (GND) to pin 20 (VREF) short

Internal current consumption during

I R

-5 mA

operation, measured in PWM gap

TC = -40 ...+150°C

Bootstrap voltage, pin 2 (C B1) to pin 3 (C B2) V B

-10

V bb = 12 V, TC = -40 ...+150°C

PWM frequency

f PWM

100 Hz

T c = -40 ... +150 °C, C t = 68 nF

Max. pulse duty factor

D imax

I L = 3A,

V C=0V , (50% V OUT)

Min. pulse duty factor

D imin

14 %

I L = 3A,

V C=0V , (50% V OUT)

Slew rate "on"

du/dt (on)

120 mV/

µs

10 ... 90% I OUT

Slew rate "off"

du/dt (off)

120 mV/

µs

90 ... 10% I OUT

Thermal overload trip temperature

150

°C

1) Note: undervoltage shutdown

2) Note: overvoltage shutdown

Semiconductor Group

2003-Oct-01

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