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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STPSC1206 датащи(PDF) 1 Page - STMicroelectronics |
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STPSC1206 датащи(HTML) 1 Page - STMicroelectronics |
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1 / 7 page  September 2009 Doc ID 16288 Rev 1 1/7 7 STPSC1206 600 V power Schottky silicon carbide diode Features ■ No reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode Description These diodes are manufactured using silicon carbide substrate. This wide bandgap material supports the manufacture of a Schottky diode structure with a high voltage rating. Such diodes exhibit no or negligible recovery characteristics. The recovery characteristics are independent of the temperature. Using these diodes will significantly reduce the switching power losses of the associated MOS- FET, and thus increase the efficiency of the overall application. These diodes will then outperform the power factor correction circuit operating in hard switching conditions. Table 1. Device summary IF(AV) 12 A VRRM 600 V Tj (max) 175 °C QC (typ) 12 nC K A TO-220AC STPSC1206D www.st.com |
Аналогичный номер детали - STPSC1206 |
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Аналогичное описание - STPSC1206 |
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ссылки URL |
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