STGIPS40W60L1 datasheet(7/21 Pages) STMICROELECTRONICS

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STGIPS40W60L1

Electrical characteristics

Doc ID 018866 Rev 3

7/21

Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 7.

Inverter part

Symbol

Parameter

Test conditions

Value

Unit

Min.

Typ.

Max.

VCE(sat)

Collector-emitter

saturation voltage

VCC = Vboot = 15 V, VIN = 1 "logic

state", IC = 30 A

-2.0

2.5

VCC = Vboot = 15 V, VIN = 1 "logic

state", IC = 30 A, TJ = 125 °C

-1.7

ICES

Collector-cut off current

(VIN = 0 "logic state")

VCE = 550 V, VCC = VBoot = 15 V,

500

µA

Diode forward voltage

VIN = 0 "logic state", IF = 30A

2.5

Switching on/off (inductive load) (1)

ton

Turn-on time

VDD = 410 V,

VCC = Vboot = 15 V,

VIN = 1 "logic state" (see Table 13)

IC = 30 A (see Figure 4 and 5)

410

tc(on)

Crossover time (on)

toff

Turn-off time

320

tc(off)

Crossover time (off)

125

trr

Reverse recovery time

115

Eon

Turn-on switching losses

585

µJ

Eoff

Turn-off switching losses

600

di/dt(on)

Rate of rise of on-state

current

VDD = 410 V, VCC = Vboot = 15 V,

VIN = 1 "logic state" (see Table 13),

IC = 80 A (see Figure 4 and 5)

2500

A/µs

ton

Turn-on time

VDD = 410 V,

VCC = Vboot = 15 V,

VIN = 1 "logic state" (see Table 13)

IC = 30 A, TJ = 125 °C

(see

Figure 4 and 5)

550

tc(on)

Crossover time (on)

110

toff

Turn-off time

420

tc(off)

Crossover time (off)

140

trr

Reverse recovery time

150

Eon

Turn-on switching losses

930

µJ

Eoff

Turn-off switching losses

780

di/dt(on)

Rate of rise of on-state

current

VDD = 410 V,

VCC = Vboot = 15 V,

VIN = 1 "logic state" (see Table 13)

IC = 80 A, TJ = 125 °C

(see

Figure 4 and 5)

2100

A/µs

tON and tOFF include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are the switching time of IGBT itself

under the internally given gate driving condition. Parameter values take into account a 20 nH stray inductance.

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