BTS307 datasheet(3/12 Pages) INFINEON

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BTS 307

Semiconductor Group

2003-Oct-01

Electrical Characteristics

Parameter and Conditions

Symbol

Values

Unit

at Tj = 25 °C, Vbb = 12 V unless otherwise specified

min

typ

max

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5)

IL = 2 A, Vbb = 24 V

Tj=25 °C:

Tj=150 °C:

RON

220

390

250

500

Ω

Nominal load current, ISO Norm (pin 3 to 5)

VON = 0.5 V, TC = 85 °C

IL(ISO)

1.4

1.7

Output current (pin 5) while GND disconnected or

GND pulled up, Vbb=32 V, VIN= 0, see diagram

page 6

IL(GNDhigh)

1.1

Turn-on time to 90% VOUT:

Turn-off time to 10% VOUT:

RL = 12

Ω, Vbb = 20V, Tj =-40...+150°C

ton

toff

µs

Slew rate on, 10 to 30% VOUT,

RL = 12

Ω, V

bb = 20V, T

j =-40...+150°C

dV /dton

µs

Slew rate off, 10 to 30% VOUT,

RL = 12

Ω, V

bb = 20V, T

j =-40...+150°C

-dV/dtoff

µs

Operating Parameters

Operating voltage

)

Tj =-40...+150°C: Vbb(on)

5.8

Undervoltage shutdown

Tj =-40...+150°C: Vbb(under)

2.7

4.7

Undervoltage restart

Tj =-40...+150°C: Vbb(u rst)

4.9

Undervoltage restart of charge pump

see diagram page 10

Tj =-40...+150°C:

Vbb(ucp)

5.6

7.5

Undervoltage hysteresis

∆V

bb(under) = Vbb(u rst) - Vbb(under)

∆V

bb(under)

0.4

Overvoltage protection

Tj =-40...+150°C:

Ibb=40 mA

Vbb(AZ)

Standby current (pin 3),

VIN=0

Tj=-40...+150°C:

Ibb(off)

µA

Operating current (Pin 1)

), VIN=5 V

IGND

2.2

)

At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V

)

See also VON(CL) in table of protection functions and circuit diagram page 6.

)

Add IST, if IST > 0, add IIN, if VIN>5.5 V

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