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MJD360T4-A датащи(PDF) 3 Page - STMicroelectronics

номер детали MJD360T4-A
подробное описание детали  Low voltage complementary power transistors
PDF  7 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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MJD360T4-A датащи(HTML) 3 Page - STMicroelectronics

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MJD360T4-A, MJD361T4-A
Electrical characteristics
Doc ID 16126 Rev 1
3/7
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Note:
For PNP types voltage and current values are negative.
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCE = 60 V
20
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 4 V
100
µA
V(BR)CEO
Collector-emitter
breakdown voltage
(IB = 0)
IC = 10 mA
60
V
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
IC = 1 mA
60
V
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IC = 100 µA
5
V
VCE(sat)
(1)
1.
Pulse test: pulse duration
≤300 µs, duty cycle ≤2 %.
Collector-emitter
saturation voltage
IC = 200 mA
IB = 10 mA
IC = 1 A
IB = 50 mA
IC = 3 A
IB = 150 mA
0.1
0.3
0.9
V
V
V
hFE
(1)
DC current gain
IC = 200 mA
VCE = 1 V
IC = 1 A
_
VCE = 4 V
IC = 3 A
VCE = 4 V
90
60
30
130
100
60



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