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BTS149 датащи(PDF) 1 Page - Infineon Technologies AG |
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BTS149 датащи(HTML) 1 Page - Infineon Technologies AG |
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1 / 10 page ![]() 2004-02-02 Page 1 HITFET ==== BTS 149 Smart Lowside Power Switch Features • Logic Level Input • Input Protection (ESD) •=Thermal shutdown with latch • Overload protection • Short circuit protection • Overvoltage protection • Current limitation • Status feedback with external input resistor • Analog driving possible Product Summary Drain source voltage VDS 60 V On-state resistance RDS(on) 18 m Ω Current limit ID(lim) 30 A Nominal load current ID(ISO) 19 A Clamping energy EAS 6000 mJ Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS chip on chip tech- nology. Fully protected by embedded protected functions. p rotection Ove rvoltag e Drain IN ES D HIT F E T Source C urrent 1 3 Ove r- protection te m pe rature S h ort circ uit protection + dv /d t lim ita tio n lim ita tio n V bb S hort circuit p rotection LO A D 2 Ov erloa d protection M |
Аналогичный номер детали - BTS149 |
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Аналогичное описание - BTS149 |
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