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BTS120 датащи(PDF) 3 Page - Infineon Technologies AG |
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BTS120 датащи(HTML) 3 Page - Infineon Technologies AG |
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3 / 10 page ![]() TEMPFET® BTS 120 3 04.97 Electrical Characteristics (cont’d) at T j = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse Diode Continuous source current I S –– 19 A Pulsed source current I SM –– 75 Diode forward on-voltage I F = 38 A, VGS = 0 V SD – 1.4 1.7 V Reverse recovery time I F = I S, diF/dt = 100 A/µs, VR = 30 V t rr – 200 – ns Reverse recovery charge I F = I S, diF/dt = 100 A/µs, VR = 30 V Q rr – 0.25 – µC Temperature Sensor Forward voltage I TS(on) = 10 mA, Tj = – 55 ... + 150 °C Sensor override, t p ≤ 100 µs T j = – 55 ... + 160 °C V TS(on) – – 1.4 – 1.5 10 V Forward current T j = – 55 ... + 150 °C Sensor override, t p ≤ 100 µs T j = – 55 ... + 160 °C I TS(on) – – – – 10 600 mA Holding current, V TS(off) = 5 V, T j = 25 °C T j = 150 °C I H 0.05 0.05 0.1 0.2 0.5 0.3 Switching temperature V TS = 5 V T TS(on) 150 –– °C Turn-off time V TS = 5 V, ITS(on) = 2 mA t off 0.5 – 2.5 µs |
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