BSS79 datasheet(2/5 Pages) INFINEON

номер детали	BSS79

подробное описание детали	NPN Silicon Switching Transistors

PDF	5 Pages

Scroll/Zoom	100%

производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

Logo

2 / 5 page

BSS79, BSS81

Nov-30-2001

Electrical Characteristics

at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

BSS79

BSS81

V(BR)CEO

Collector-base breakdown voltage

IC = 10 µA, IE = 0

V(BR)CBO

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

Collector cutoff current

VCB = 60 V, IE = 0

ICBO

Collector cutoff current

VCB = 60 V, IE = 0 , TA = 150 °C

ICBO

µA

Emitter cutoff current

VEB = 3 V, IC = 0

IEBO

DC current gain 1)

IC = 100 µA, VCE = 10 V

IC = 1 mA, VCE = 10 V

IC = 10 mA, VCE = 10 V

IC = 150 mA, VCE = 10 V

IC = 500 mA, VCE = 10 V

BSS79/81B

BSS79/81C

BSS79/81B

BSS79/81C

BSS79/81B

BSS79/81C

BSS79/81B

BSS79/81C

BSS79/81B

BSS79/82C

hFE

100

120

300

Collector-emitter saturation voltage1)

IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA

VCEsat

0.3

1.3

Base-emitter saturation voltage 1)

IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA

VBEsat

1.2

2.0

1) Pulse test: t

≤=300µs, D = 2%

BSS79 датащи(PDF) 2 Page - Infineon Technologies AG

BSS79 датащи(HTML) 2 Page - Infineon Technologies AG

Html Pages

1 2 3 4 5

датащи скачать

ссылки URL