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STB80N4F6AG датащи(PDF) 5 Page - STMicroelectronics

номер детали STB80N4F6AG
подробное описание детали  High avalanche ruggedness
PDF  15 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB80N4F6AG датащи(HTML) 5 Page - STMicroelectronics

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STB80N4F6AG
Electrical characteristics
DocID027978 Rev 2
5/15
Table 7: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source drain current
80
A
ISDM(1)
Source-drain current
(pulsed)
320
A
VSD(2)
Forward on voltage
ISD= 40 A, VGS= 0 V
1.3
V
trr
Reverse recovery time
ISD
= 80 A, di/dt = 100 A/μs,
VDD= 32 V
(See Figure 17: "Unclamped
inductive waveform")
41.1
ns
QRR
Reverse recovery charge
43.6
nC
IRRM
Reverse recovery current
2.1
A
Notes:
(1)Pulse width limited by safe operating area.
(2)Pulsed: pulse duration = 300 μs, duty cycle 1.5%



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