STB35N60DM2 datasheet(1/15 Pages) STMICROELECTRONICS

номер детали	STB35N60DM2

подробное описание детали	Extremely low gate charge and input capacitance

PDF	15 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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September 2015

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This is information on a product in full production.

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STB35N60DM2

N-channel 600 V, 0.094

Ω typ., 28 A MDmesh™ DM2

Power MOSFET in a D²PAK package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on)

max.

ID

PTOT

STB35N60DM2

600 V

0.110

Ω

28 A

210 W



Fast-recovery body diode



Extremely low gate charge and input

capacitance



Low on-resistance



100% avalanche tested



Extremely high dv/dt ruggedness



Zener-protected

Applications



Switching applications

Description

This high voltage N-channel Power MOSFET is

part of the MDmesh™ DM2 fast recovery diode

series. It offers very low recovery charge (Qrr)

and time (trr) combined with low RDS(on), rendering

it suitable for the most demanding high efficiency

converters and ideal for bridge topologies and

ZVS phase-shift converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STB35N60DM2

35N60DM2

D²PAK

Tape and reel

1

3

TAB

D2PAK

Аналогичный номер детали - STB35N60DM2

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Inchange Semiconductor ...	STB35N65M5	316Kb / 2P	isc N-Channel MOSFET Transistor

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Аналогичный номер детали - STB35N60DM2

Аналогичное описание - STB35N60DM2

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