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LNBH25S датащи(PDF) 17 Page - STMicroelectronics

номер детали LNBH25S
подробное описание детали  LNB supply and control IC with step-up and IC interface
PDF  37 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

LNBH25S датащи(HTML) 17 Page - STMicroelectronics

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LNBH25S
Typical application circuits
DocID026736 Rev 2
17/37
Component
Notes
L1
With COMP=0, use 10 µH inductor with ISAT > IPEAK where IPEAK is the boost
converter peak current, or
with COMP=1 and C2 = 22 µF, use 6.8 µH inductor with ISAT > IPEAK where IPEAK is
the boost converter peak current
Figure 7: DiSEqC 2.x application circuit
Table 6: DiSEqC 2.x bill of material
Component
Notes
R1 (RSEL)
SMD resistor. Refer to Table 13: "Electrical characteristics" and ISEL pin
description in Table 2: "Pin description"
C1
> 25 V electrolytic capacitor, 100 µF or higher is suitable
or
> 25 V ceramic capacitor, 10 µF or higher is suitable
C2
With COMP = 0, > 25 V electrolytic capacitor, 100 µF or higher is suitable
or
with COMP = 1, > 35 V ceramic capacitor, 22 µF (or 2 x10 µF) or higher is suitable
C3
From 470 nF to 2.2 µF ceramic capacitor placed as closer as possible to VUP pin.
Higher values allow lower DC-DC noise
C5
From 100 nF to 220 nF ceramic capacitor placed as closer as possible to VOUT
pin. Higher values allow lower DC-DC noise
C4, C7
220 nF ceramic capacitors. To be placed as closer as possible to VOUT pin
C6
10 nF ceramic capacitors
D1
STPS130A or similar Schottky diode



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