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L6362A датащи(PDF) 14 Page - STMicroelectronics |
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L6362A датащи(HTML) 14 Page - STMicroelectronics |
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14 / 37 page ![]() Electrical characteristics L6362A 14/37 DocID027660 Rev 4 Table 9: I/Q receiver Symbol Parameter Test conditions Min. Typ. Max. Unit VI/QTHLH I/Q upper voltage threshold 8 V < VCC < 18 V 58.3 72.2 %VCC VCC ≥ 18 V 10.5 11.75 13 V VI/QTHHL I/Q lower voltage threshold 8 V < VCC < 18 V 44.4 63.9 %VCC VCC ≥ 18 V 8 9.75 11.5 V VQHY I/Q hysteresis voltage VCC ≥ 18 V 0.8 2 V RI/Q Weak pull-down on I/Q pin 250 550 kΩ tdbq I/Q debounce time 30 50 110 ns Table 10: Timing VCC = 24 V Symbol Parameter Test conditions Min. Typ. Max. Unit DTHS-LS Deadtime between HS switch-off and LS switch- on (push-pull configuration) IN2 commutations only LOADH = 120 Ω between OUT and GND; LOADL = 120 Ω between OUT and VCC 110 ns DTLS-HS Deadtime between LS switch-off and HS switch-on (push-pull configuration) 140 tpI/Q I/Q to OUTI/Q propagation delay time 200 tpOUT INx (or EN/DIAG) to OUTH or OUTL propagation delay time EN/DIAG = VDD, IN1 commutations in HS or LS configurations only. R-L load (120 Ω, 10 µH) to GND in HS, to VCC in LS 370 ns EN/DIAG=VDD, IN2 commutations in PP configuration only. R-L load (120 Ω, 10 µH) to GND for high, low transitions of the output, to VCC for low, high transitions 270 ns EN/DIAG commutations in HS or LS configurations only. R-L load (120 Ω, 10 µH) to GND in HS, to VCC in LS 400 ns tr(ON) OUTX and I/Q rise time (from VCC 10% to VCC 80%) in push-pull and HS configuration (high-side switch turn- on) IOUT = 0.2 A, R-L load (L = 10 µH) to GND. I = 0.2 A flowing from the IC to the load. EN/DIAG, IN1 or IN2 commutations 380 860 ns tf(ON) OUTX and I/Q fall time (from VCC 90% to VCC 10%) in push-pull and LS configuration (low-side switch turn-on) IOUT = 0.2 A, R-L load (L = 10 µH) to VCC. I = 0.2 A flowing from the load to the IC. EN/DIAG, IN1 or IN2 commutations 380 860 ns |
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