BSP324 datasheet(3/8 Pages) INFINEON

номер детали	BSP324

подробное описание детали	SIPMOS Power-Transistor

PDF	8 Pages

Scroll/Zoom	100%

производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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3 / 8 page

2003-02-21

Page 3

Rev. 1.0

BSP324

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Dynamic Characteristics

Transconductance

gfs

VDS≥2*ID*RDS(on)max,

ID=0.14A

0.09

0.19

Input capacitance

Ciss

VGS=0, VDS=25V,

f=1MHz

103

154

Output capacitance

Coss

9.2

13.6

Reverse transfer capacitance

Crss

3.8

5.7

Turn-on delay time

td(on)

VDD=225V, VGS=10V,

ID=0.17A, RG=6Ω

4.6

6.9

Rise time

4.4

6.6

Turn-off delay time

td(off)

Fall time

102

Gate Charge Characteristics

Gate to source charge

Qgs

VDD=320V, ID=0.17A

0.35

0.45

Gate to drain charge

Qgd

2.17

2.82

Gate charge total

VDD=320V, ID=0.17A,

VGS=0 to 10V

4.54

5.9

Gate plateau voltage

V(plateau) VDD=320V, ID=0.17A

3.6

Reverse Diode

Inverse diode continuous

forward current

TA=25°C

0.17

Inv. diode direct current, pulsed ISM

0.68

Inverse diode forward voltage

VSD

VGS=0, IF=0.17A

0.8

1.2

Reverse recovery time

trr

VR=200V, IF=lS,

diF/dt=100A/µs

127

Reverse recovery charge

Qrr

104

156

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