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BSP296 датащи(PDF) 3 Page - Infineon Technologies AG |
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BSP296 датащи(HTML) 3 Page - Infineon Technologies AG |
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3 / 8 page ![]() 2002-12-10 Page 3 Rev. 1.0 BSP296 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=0.88A 0.6 1.2 - S Input capacitance Ciss VGS=0, VDS=25V, f=1MHz - 291 364 pF Output capacitance Coss - 53 66 Reverse transfer capacitance Crss - 29 36 Turn-on delay time td(on) VDD=50V, VGS=10V, ID=1.1A, RG=6Ω - 5.2 7.8 ns Rise time tr - 7.9 11.8 Turn-off delay time td(off) - 37.4 56.1 Fall time tf - 21.4 32.1 Gate Charge Characteristics Gate to source charge Qgs VDD=80V, ID=1.1A - 0.7 0.9 nC Gate to drain charge Qgd - 5 7.5 Gate charge total Qg VDD=80V, ID=1.1A, VGS=0 to 10V - 13.8 17.2 Gate plateau voltage V(plateau) VDD=80V, ID = 1.1 A - 2.7 - V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - 1.1 A Inv. diode direct current, pulsed ISM - - 4.4 Inverse diode forward voltage VSD VGS=0, IF = IS - 0.82 1.2 V Reverse recovery time trr VR=50V, IF=lS, diF/dt=100A/µs - 44.3 55.4 ns Reverse recovery charge Qrr - 71.9 89.8 nC |
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