BSP125 datasheet(3/8 Pages) INFINEON

номер детали	BSP125

подробное описание детали	SIPMOS Power-Transistor

PDF	8 Pages

Scroll/Zoom	100%

производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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3 / 8 page

2003-02-26

Page 3

Rev. 1.0

BSP125

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Dynamic Characteristics

Transconductance

gfs

VDS≥2*ID*RDS(on)max,

ID=0.1A

0.06

0.18

Input capacitance

Ciss

VGS=0, VDS=25V,

f=1MHz

100

150

Output capacitance

Coss

8.2

12.3

Reverse transfer capacitance

Crss

3.2

4.8

Turn-on delay time

td(on)

VDD=300V, VGS=10V,

ID=0.13A, RG=6Ω

7.7

11.6

Rise time

14.4

Turn-off delay time

td(off)

Fall time

110

165

Gate Charge Characteristics

Gate to source charge

Qgs

VDD=400V, ID=0.13A

0.27

0.3

Gate to drain charge

Qgd

2.3

3.5

Gate charge total

VDD=400V, ID=0.13A,

VGS=0 to 10V

4.4

6.6

Gate plateau voltage

V(plateau) VDD=400V, ID=0.13A

3.44

Reverse Diode

Inverse diode continuous

forward current

TA=25°C

0.12

Inv. diode direct current, pulsedISM

0.48

Inverse diode forward voltage VSD

VGS=0, IF=0.12A

0.8

1.2

Reverse recovery time

trr

VR=300V, IF=lS,

diF/dt=100A/µs

156

235

Reverse recovery charge

Qrr

165

250

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