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BSP92P датащи(PDF) 3 Page - Infineon Technologies AG |
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BSP92P датащи(HTML) 3 Page - Infineon Technologies AG |
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3 / 8 page ![]() 2002-07-25 Page 3 Preliminary data BSP 92 P Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs |VDS|≥2*|ID|*RDS(on)max , ID=-0.23A 0.29 0.57 - S Input capacitance Ciss VGS=0, VDS=-25V, f=1MHz - 83 104 pF Output capacitance Coss - 13 16 Reverse transfer capacitance Crss - 6 8 Turn-on delay time td(on) VDD=-125V, VGS=-10V, ID=-0.26A, RG=6Ω - 5 8 ns Rise time tr - 6 9 Turn-off delay time td(off) - 67 101 Fall time tf - 33 50 Gate Charge Characteristics Gate to source charge Qgs VDD=-200V, ID=-0.26A - -0.1 -0.13 nC Gate to drain charge Qgd - -1.9 -2.4 Gate charge total Qg VDD=-200V, ID=-0.26A, VGS=0 to -10V - -4.3 -5.4 Gate plateau voltage V(plateau) VDD=-200V, ID=-0.26A - -2.9 -3.6 V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - -0.26 A Inv. diode direct current, pulsed ISM - - -1.04 Inverse diode forward voltage VSD VGS=0, IF=-0.26A - -0.83 -1.21 V Reverse recovery time trr VR=-125V, IF=lS, diF/dt=100A/µs - 51 64 ns Reverse recovery charge Qrr - 76 95 nC |
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