BSO150N03 datasheet(3/9 Pages) INFINEON

номер детали	BSO150N03

подробное описание детали	OptiMOS2 Power-Transistor

PDF	9 Pages

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производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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BSO150N03

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

1420

1890

Output capacitance

C oss

510

680

Reverse transfer capacitance

C rss

100

Turn-on delay time

t d(on)

5.3

7.9

Rise time

t r

4.0

6.0

Turn-off delay time

t d(off)

-21

Fall time

t f

3.0

4.5

Gate Charge Characteristics

Gate to source charge

Q gs

3.9

5.2

Gate charge at threshold

Q g(th)

2.3

3.0

Gate to drain charge

Q gd

2.6

4.0

Switching charge

Q sw

4.3

6.1

Gate charge total

Q g

-11

Gate plateau voltage

V plateau

2.8

Gate charge total, sync. FET

Q g(sync)

V DS=0.1 V,

V GS=0 to 5 V

9.6

Output charge

Q oss

V DD=15 V, V GS=0 V

-12

Reverse Diode

Diode continous forward current

I S

Diode pulse current

I S,pulse

Diode forward voltage

V SD

V GS=0 V, I F=2 A,

T j=25 °C

0.75

Reverse recovery charge

Q rr

V R=12 V, I F=I S,

di F/dt =400 A/µs

4) See figure 16 for gate charge parameter definition

T A=25 °C

Values

V GS=0 V, V DS=15 V,

f =1 MHz

V DD=15 V, V GS=10 V,

I D=4.5 A, R G=2.7 Ω

V DD=15 V, I D=4.5 A,

V GS=0 to 5 V

Rev. 1.11

page 3

2004-02-09

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