BFS460L6 datasheet(3/3 Pages) INFINEON

номер детали	BFS460L6

подробное описание детали	NPN Silicon RF TWIN Transistor

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производитель	INFINEON [Infineon Technologies AG]

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BFS460L6

Jun-15-2004

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

AC Characteristics (verified by random sampling)

Transition frequency

IC = 30 mA, VCE = 3 V, f = 1 GHz

GHz

Collector-base capacitance

VCB = 3 V, f = 1 MHz, emitter grounded

Ccb

0.33

0.5

Collector emitter capacitance

VCE = 3 V, f = 1 MHz, base grounded

Cce

0.17

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, collector grounded

Ceb

0.57

Noise figure

IC = 5 mA, VCE = 3 V, ZS = ZSopt, f = 1.8 GHz

IC = 5 mA, VCE = 3 V, ZS = ZSopt, f = 3 GHz

1.1

1.4

Power gain, maximum stable1)

IC = 20 mA, VCE = 3 V, ZS = ZSopt,

ZL = ZLopt, f = 1.8 GHz

IC = 20 mA, VCE = 3 V, ZS = ZSopt,

ZL = ZLopt , f = 3 GHz

Gms

14.5

Transducer gain

IC = 20 mA, VCE = 3 V, ZS = ZL = 50Ω,

f = 1.8 GHz

IC = 20 mA, VCE = 3 V, ZS = ZL = 50Ω,

f = 3 GHz

|S21e|2

12.5

Third order intercept point at output2)

VCE = 3 V, IC = 20 mA, ZS = ZL = 50Ω,

f = 1,8 GHz

IP3

dBm

1dB Compression point at output

IC = 20 mA, VCE = 3 V, ZS = ZL = 50Ω ,

f = 1.8 GHz

P-1dB

1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|

2IP3 value depends on termination of all intermodulation frequency components.

Termination used for this measurement is 50

Ω from 0.1 MHz to 6 GHz

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