Dec-07-2001

1

NPN Silicon RF Transistor

Preliminary data

For highest gain low noise amplifier

at 1.8 GHz and 2 mA / 2 V

Noise Figure F = 0.95 dB

For oscillators up to 15 GHz

Gold metallization for high reliability

TSFP-4

1

2

4

3

APs



!

"

di r e c t i o n of unr eel i n g

t op v i ew

ESD

: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFP520F

APs

1 = B

2 = E

3 = C

4 = E

TSFP-4

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

2.5

V

Collector-base voltage

10

Emitter-base voltage

1

Collector current

40

mA

Base current

4

Total power dissipation

100

mW

Junction temperature

150

°C

Ambient temperature

-65 ... 150

Storage temperature

-65 ... 150

Thermal Resistance

430

K/W