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BFP196 датащи(PDF) 3 Page - Infineon Technologies AG |
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BFP196 датащи(HTML) 3 Page - Infineon Technologies AG |
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3 / 7 page ![]() BFP196 Jun-22-2001 3 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics (verified by random sampling) Transition frequency IC = 70 mA, VCE = 8 V, f = 500 MHz fT 5 7.5 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 0.97 1.4 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz Cce - 0.3 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 3.7 - Noise figure IC = 20 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz F - - 1.5 2.5 - - dB Power gain, maximum available 1) IC = 50 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Gma - - 16 10 - - Transducer gain IC = 50 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz |S21e|2 - - 12.5 6.5 - - 1Gma = |S21 / S12| (k-(k2-1)1/2) |
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