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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BCW60C датащи(PDF) 3 Page - Infineon Technologies AG |
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BCW60C датащи(HTML) 3 Page - Infineon Technologies AG |
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3 / 9 page  BCW60, BCX70 3 Jan-29-2002 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Collector cutoff current VCB = 32 V, IE = 0 VCB = 45 V, IE = 0 BCW60 /60FF BCX70 ICBO - - - - 20 20 nA Collector cutoff current VCB = 32 V, IE = 0 , TA = 150 °C VCB = 45 V, IE = 0 , TA = 150 °C BCW60 / 60FF BCX70 ICBO - - - - 20 20 µA Emitter cutoff current VEB = 4 V, IC = 0 IEBO - - 20 nA DC current gain 1) IC = 10 µA, VCE = 5 V hFE-grp. A/ G hFE-grp. B/ H hFE-grp. C/ J/ FF hFE-grp. D/ K/ FN hFE 20 20 40 100 140 200 300 460 - - - - - DC current gain 1) IC = 2 mA, VCE = 5 V hFE-grp. A/ G hFE-grp. B/ H hFE-grp. C/ J/ FF hFE-grp. D/ K/ FN hFE 120 180 250 380 170 250 350 500 220 310 460 630 DC current gain 1) IC = 50 mA, VCE = 1 V hFE-grp. A/ G hFE-grp. B/ H hFE-grp. C/ J/ FF hFE-grp. D/ K/ FN hFE 50 70 90 100 - - - - - - - - 1) Pulse test: t ≤=300µs, D = 2% |
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