BCV62 datasheet(2/5 Pages) INFINEON

номер детали	BCV62

подробное описание детали	PNP Silicon Double Transistor

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BCV62

Jul-11-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics of T1

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

V(BR)CEO

Collector-base breakdown voltage

IC = 10 µA, IB = 0

V(BR)CBO

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

Collector cutoff current

VCB = 30 V, IE = 0

ICBO

Collector cutoff current

VCB = 30 V, IE = 0 , TA = 150 °C

ICBO

µA

DC current gain 1)

IC = 0.1 mA, VCE = 5 V

hFE

100

DC current gain 1)

IC = 2 mA, VCE = 5 V

hFE

125

220

420

180

290

520

220

475

800

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

250

300

650

Base-emitter saturation voltage 1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VBEsat

700

850

Base-emitter voltage 1)

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

VBE(ON)

600

650

750

820

BCV62A

BCV62B

BCV62C

1) Pulse test: t

≤ 300µs, D = 2%

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