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54ACT899 датащи(PDF) 8 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
номер детали 54ACT899
подробное описание детали  9-Bit Latchable Transceiver with Parity Generator/Checker
PDF  12 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
Logo NSC - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC)
−0.5V to +7.0V
DC Input Diode Current (I
IK)
V
I = −0.5V
−20 mA
V
I = VCC + 0.5V
+20 mA
DC Input Voltage (V
I)
−0.5V to V
CC + 0.5V
DC Output Diode Current (I
OK)
V
O = −0.5V
−20 mA
V
O = VCC + 0.5V
+20 mA
DC Output Voltage (V
O)
−0.5V to V
CC + 0.5V
DC Output Source
or Sink Current (I
O)
±50 mA
DC V
CC or Ground Current
per Output Pin (I
CC or IGND)
±50 mA
Storage Temperature (T
STG)
−65˚C to +150˚C
DC Latch-Up Source or
Sink Current
±300 mA
Junction Temperature (T
J)
CDIP
175˚C
Recommended Operating
Conditions
Supply Voltage (V
CC)
’ACT
4.5V to 5.5V
Input Voltage (V
I)
0VtoV
CC
Output Voltage (V
O)
0VtoV
CC
Operating Temperature (T
A)
54ACT
−55˚C to +125˚C
Minimum Input Edge Rate
∆V/∆t
’ACT Devices
V
IN from 0.8V to 2.0V
V
CC @ 4.5V, 5.5V
125 mV/ns
Note 2: Absolute maximum ratings are those values beyond which damage
to the device may occur. The databook specifications should be met, without
exception, to ensure that the system design is reliable over its power supply,
temperature, and output/input loading variables. National does not recom-
mend operation of FACT® circuits outside databook specifications.
Note 3: PLCC packaging is not recommended for applications requiring
greater than 2000 temperature cycles from −40˚C to +125˚C.
DC Electrical Characteristics for ’ACT Family Devices
54ACT
Symbol
Parameter
V
CC
T
A =
Units
Conditions
(V)
−55˚C to +125˚C
Guaranteed
Limits
V
IH
Minimum High Level
4.5
2.0
V
V
OUT = 0.1V
Input Voltage
5.5
2.0
or V
CC − 0.1V
V
IL
Maximum Low Level
4.5
0.8
V
V
OUT = 0.1V
Input Voltage
5.5
0.8
or V
CC − 0.1V
V
OH
Minimum High Level
4.5
4.4
V
I
OUT = −50 µA
Output Voltage
5.5
5.4
(Note 4)
V
IN = VIL or VIH
4.5
3.70
V
I
OH = −24 mA
5.5
4.70
I
OH = −24 mA
V
OL
Maximum Low Level
4.5
0.1
V
I
OUT = 50 µA
Output Voltage
5.5
0.1
(Note 4)
V
IN = VIL or VIH
4.5
0.50
V
I
OL =24mA
5.5
0.50
I
OL =24mA
I
IN
Maximum Input
5.5
±1.0
µA
V
I = VCC, GND
Leakage Current
I
OZ
Maximum TRI-STATE
5.5
±10.0
µA
V
I = VIL,VIH
Leakage Current
V
O = VCC, GND
I
CCT
Maximum I
CC/Input
5.5
1.6
mA
V
I = VCC − 2.1V
I
OLD
Minimum Dynamic
Output Current (Note 5)
5.5
50
mA
V
OLD = 1.65V Max
I
OHD
5.5
−50
mA
V
OHD = 3.85V Min
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