BCV27 datasheet(2/5 Pages) INFINEON

номер детали	BCV27

подробное описание детали	NPN Silicon Darlington Transistors

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BCV27, BCV47

Jul-12-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

BCV27

BCV47

V(BR)CEO

Collector-base breakdown voltage

IC = 100 µA, IB = 0

BCV27

BCV47

V(BR)CBO

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

Collector cutoff current

VCB = 30 V, IE = 0

VCB = 60 V, IE = 0

BCV27

BCV47

ICBO

100

Collector cutoff current

VCB = 30 V, IE = 0 , TA = 150 °C

VCB = 60 V, IE = 0 , TA = 150 °C

BCV27

BCV47

ICBO

µA

Emitter cutoff current

VEB = 4 V, IC = 0

IEBO

100

DC current gain 1)

IC = 100 µA, VCE = 1 V

BCV27

BCV47

hFE

4000

2000

DC current gain 1)

IC = 10 mA, VCE = 5 V

BCV27

BCV47

hFE

10000

4000

DC current gain 1)

IC = 100 mA, VCE = 5 V

BCV27

BCV47

hFE

20000

10000

DC current gain 1)

IC = 0.5 A, VCE = 5 V

BCV27

BCV47

hFE

4000

2000

1) Pulse test: t

≤ 300µs, D = 2%

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