BCP56 datasheet(3/5 Pages) INFINEON

номер детали	BCP56

подробное описание детали	NPN Silicon AF Transistors

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производитель	INFINEON [Infineon Technologies AG]

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3 / 5 page

BCP54...BCP56

Nov-29-2001

Electrical Characteristics

at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

BCP54

BCP55

BCP56

V(BR)CEO

Collector-base breakdown voltage

IC = 100 µA, IE = 0

BCP54

BCP55

BCP56

V(BR)CBO

100

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

Collector cutoff current

VCB = 30 V, IE = 0

ICBO

100

Collector cutoff current

VCB = 30 V, IE = 0 , TA = 150 °C

ICBO

µA

DC current gain 1)

IC = 5 mA, VCE = 2 V

hFE

DC current gain 1)

IC = 150 mA, VCE = 2 V

BCP54...56

hFE-grp.10

hFE-grp.16

hFE

100

160

250

160

250

DC current gain 1)

IC = 500 mA, VCE = 2 V

hFE

Collector-emitter saturation voltage1)

IC = 500 mA, IB = 50 mA

VCEsat

0.5

Base-emitter voltage 1)

IC = 500 mA, VCE = 2 V

VBE(ON)

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 10 V, f = 100 MHz

100

MHz

1) Pulse test: t

≤=300µs, D = 2%

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