AP22966

Document number: DS36217 Rev. 2 - 2

3 of 14

www.diodes.com

November 2014

© Diodes Incorporated

AP22966

010

Symbol

Parameter

Ratings

Units

ESD HBM

Human Body ESD Protection

4000

V

ESD MM

Machine Model ESD Protection

300

V

ESD CDM

Charged Device Model ESD Protection

1000

V

Input Voltage at VIN1, VIN2 Pin

-0.3 to +6

V

Bias Supply Voltage

-0.3 to +6

V

Output Voltage at VOUT1, VOUT2 Pin

-0.3 to +6

V

Enable Voltage at EN1, EN2 Pin

-0.3 to +6

V

Load Current per channel

6

A

Maximum pulsed switch current

per channel, pulse <300μs, 2% duty cycle

8

A

Maximum Junction Temperature

+125

°C

Storage Temperature

-65 to +150

°C

Power Dissipation

(Note 5) V-DFN3020-14

2.7

W

Thermal Resistance, Junction to Ambient

(Note 5) V-DFN3020-14

46.5

°C/W

(Note 5) V-DFN3020-14

8

Thermal Resistance, Junction to Leads

(Note 6) V-DFN3020-14

300

°C/W

Notes:

4. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only;

functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be

affected by exposure to absolute maximum rating conditions for extended periods of time.

5. Device mounted on 2"x2" FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout

6. Thermal resistance from junction to solder-point

Symbol

Parameter

Min

Max

Units

Input Voltage Range at VIN1, VIN2 Pin

0.8

V

Bias Supply Voltage Range

2.5

5.5

V

Enable Voltage Range at EN1, EN2 Pin

0

5.5

V

Output Voltage at VOUT1, VOUT2 Pin

–

V

Operating Ambient Temperature

-40

+85

°C

Input Capacitor

1

–

µF

EN Input Logic High Voltage

1.2

5.5

V

EN Input Logic Low Voltage

0

0.5

V