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AP9211 датащи(PDF) 7 Page - Diodes Incorporated |
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AP9211 датащи(HTML) 7 Page - Diodes Incorporated |
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7 / 17 page ![]() AP9211 Document number: DS37596 Rev. 2 - 2 7 of 17 www.diodes.com December 2015 © Diodes Incorporated AP9211 Electrical Characteristics (continued) (Notes 7 & 8) (TA = +25°C, VDD = 3.5V, VSS = 0V, R1 = 220Ω, R2 = 1.0kΩ, C1 = 100nF, unless otherwise specified) Symbol Parameter Conditions Min Typ Max Units IDSS Zero Gate Voltage Drain Current VDS = 20V, VGS=0 – – 1.0 μA RSS(ON)1 Static Source-Source On-Resistance 1 VDD = 4.0V ID = 1.0A 20 27 30 mΩ RSS(ON)2 Static Source-Source On-Resistance 2 VDD = 3.9V ID = 1.0A 21 27 31 mΩ RSS(ON)3 Static Source-Source On-Resistance 3 VDD = 3.0V ID = 1.0A 21 28 33 mΩ VSD Diode Forward Voltage VGS = 0V (Note 6) IS = 1A – 0.75 1.0 V Notes: 7. In case of Gate-Source voltage of charging MOSFET is 0V. In case of Gate-Source voltage of discharging MOSFET is 0V. 8. These specifications are guaranteed by design - will not be tested in production. |
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