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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BAW79C датащи(PDF) 1 Page - Infineon Technologies AG |
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BAW79C датащи(HTML) 1 Page - Infineon Technologies AG |
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1 / 3 page  BAW79A...BAW79D Aug-20-2001 1 Silicon Switching Diodes Switching applications High breakdown voltage Common cathode 2 1 3 VPS05162 2 EHA07003 1 2 3 Type Marking Pin Configuration Package BAW79A BAW79B BAW79C BAW79D GE GF GG GH 1 = A1 1 = A1 1 = A1 1 = A1 2 = C1/2 2 = C1/2 2 = C1/2 2 = C1/2 3 = A2 3 = A2 3 = A2 3 = A2 SOT89 SOT89 SOT89 SOT89 Maximum Ratings Parameter Symbol BAW 79A BAW 79B BAW 79C BAW 79D Unit Diode reverse voltage VR 50 100 200 400 V Peak reverse voltage VRM 50 100 200 400 Forward current IF 1 A Peak forward current IFM 1 Surge forward current, t = 1 s IFS 10 Total power dissipation, TS = 115 °C Ptot 1 W Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 35 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
Аналогичный номер детали - BAW79C |
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Аналогичное описание - BAW79C |
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