BAS52 datasheet(1/4 Pages) INFINEON

номер детали	BAS52

подробное описание детали	Silicon Schottky Diode

PDF	4 Pages

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производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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Nov-04-2002

1

BAS52...

Silicon Schottky Diode

Medium current rectifier Schottky diode

Low forward voltage at 200mA

High reverse voltage

BAS52-02V

1

2

ESD

: Electrostatic discharge sensitive device, observe handling precaution!

Type

Package

Configuration

Marking

BAS52-02V

SC79

single

y

Maximum Ratings at TA = 25°C, unless otherwise specified

Parameter

Symbol

Value

Unit

Diode reverse voltage

VR

45

V

Forward current

IF

750

mA

Surge forward current (t = 100µs)

IFSM

2000

Average forward current (50/60Hz, sinus)

IFAV

500

Total power dissipation

TS 110°C

Ptot

500

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

-65 ... 150

Thermal Resistance

Parameter

Symbol

Value

Unit

Junction - soldering point1)

RthJS

60

K/W

1For calculation of RthJA please refer to Application Note Thermal Resistance

Аналогичный номер детали - BAS52

производитель	номер детали	датащи	подробное описание детали
Infineon Technologies A...	BAS52-02V	73Kb / 7P	Silicon Schottky Diode 2007-04-19
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BAS52 датащи(PDF) 1 Page - Infineon Technologies AG

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Аналогичный номер детали - BAS52

Аналогичное описание - BAS52

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