D5V0F2U6LP

Document number: DS36672 Rev. 3 - 2

2 of 4

www.diodes.com

November 2014

© Diodes Incorporated

D5V0F2U6LP

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Current

1.5

A

8/20µs (Note 7)

ESD Protection

– Contact Discharge

±15

kV

Standard IEC 61000-4-2

ESD Protection

– Air Discharge

±15

kV

Standard IEC 61000-4-2

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 5)

300

mW

417

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Standoff Voltage

—

—

5.5

V

—

Channel Leakage Current (Note 6)

—

—

100

nA



Reverse breakdown voltage

6.0

—

—

V



Clamping Voltage, Positive Transients (Note 7)

—

10

12

V

Channel Input Capacitance (Note 8)

—

0.5

—

pF

GND

—

0.4

0.65

GND

Dynamic Resistance

—

0.9

—

Ω

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at

http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

8. Measured from any I/O to GND.

9. For information on the impact of Diodes' USB 2.0 compatible ESD protectors on signal integrity including eye diagram plots, please refer to AN77 at the

following URL: http://www.diodes.com/destools/appnote_dnote.html.

0

125

175

150

50

100

0

T , AMBIENT TEMPERATURE ( C)

Figure 1 Power Derating Curve

A

°

25

100

50

75

150

200

Note 5

250

300

350

400

0

50

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (°C)

Figure 2 Pulse Derating Curve

A

0

100

25

75

175 200