DMNH10H028SPS datasheet(2/7 Pages) DIODES

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POWERDI is a registered trademark of Diodes Incorporated.

DMNH10H028SPS

Document number: DS38047 Rev. 2 - 2

2 of 7

www.diodes.com

December 2015

DMNH10H028SPS

Maximum Ratings (@TC = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

100

Gate-Source Voltage

VGSS

±20

Continuous Drain Current, VGS = 10V

Steady

State

TC = +25°C

TC = +100°C

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%) (Note 5)

IDM

Maximum Continuous Body Diode Forward Current (Note 6)

3.9

Avalanche Current (Note 8) L=0.1mH

IAS

Avalanche Energy (Note 8) L=0.1mH

EAS

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

1.6

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

RJA

°C/W

Total Power Dissipation (Note 6)

2.9

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

RJA

°C/W

Thermal Resistance, Junction to Case

RJC

1.8

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TC = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

100

—

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS

—

1.0

µA

VDS = 100V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = 20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

2.0

2.5

4.0

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)

—



VGS = 10V, ID = 20A

Diode Forward Voltage

VSD

—

0.7

1.2

VGS = 0V, IS = 1.0A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

2245

—

VDS = 50V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss

—

173

—

Reverse Transfer Capacitance

Crss

—

Gate Resistance

—

1.9

—



VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 10V)

—



VDD = 50V, ID = 20A

Total Gate Charge (VGS = 6.0V)

—

Gate-Source Charge

Qgs

—

7.3

—

Gate-Drain Charge

Qgd

—

9.2

—

Turn-On Delay Time

tD(ON)

—

6.4

—

VGS = 10V, VDS= 50V,

RG = 3.0, ID = 20A

Turn-On Rise Time

—

5.8

—

Turn-Off Delay Time

tD(OFF)

—

17.8

—

Turn-Off Fall Time

—

4.8

—

Reverse Recovery Time

tRR

—

IF = 20A, di/dt = 100A/µs

Reverse Recovery Charge

QRR

—

IF = 20A, di/dt = 100A/µs

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

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