ZXMS6004FFQ

Document number: DS37132 Rev. 4 - 2

5 of 9

www.diodes.com

January 2016

© Diodes Incorporated

ZXMS6004FFQ

DMN2027USS

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Static Characteristics

Drain-Source Clamp Voltage

60

65

70

V

Off-State Drain Current

—

—

500

nA

—

—

1

µA

Input Threshold Voltage

0.7

1

1.5

V

Input Current

—

60

100

μA

—

120

200

Input Current while Overtemperature Active

—

—

—

220

μA

Static Drain-Source On-State Resistance

—

400

600

m

Ω

—

350

500

Continuous Drain Current (Note 6)

0.9

—

—

A

1.0

—

—

Continuous Drain Current (Note 7)

1.2

—

—

1.3

—

—

Current Limit (Note 9)

0.7

1.7

—

A

1

2.2

—

Dynamic Characteristics

Turn-On Delay Time

—

5

—

μs

Rise Time

—

10

—

Turn-Off Delay Time

—

45

—

Fall Time

—

15

—

Overtemperature Protection

Thermal Overload Trip Temperature (Note 10)

+150

+175

—

°C

—

Thermal Hysteresis (Note 10)

—

+10

—

°C

—

Notes:

9.

The drain current is restricted only when the device is in saturation (see graph ‘Typical Output Characteristic’). This allows the device to be used in the

fully on-state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside

saturation makes current limit unnecessary.

10. Overtemperature

protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal

operating range, so this part is not designed to withstand over-temperature for extended periods.