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DMTH6005LPS датащи(PDF) 2 Page - Diodes Incorporated |
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DMTH6005LPS датащи(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page ![]() POWERDI is a registered trademark of Diodes Incorporated. DMTH6005LPS Document number: DS38151 Rev. 3 - 2 2 of 7 www.diodes.com November 2015 © Diodes Incorporated DMTH6005LPS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 5) TA = +25C TA = +70C ID 20.6 17.2 A Continuous Drain Current (Note 6) TC = +25C (Note 9) ID 100 A TC = +100C 90 Maximum Continuous Body Diode Forward Current (Note 6) IS 100 A Pulsed Drain Current (10 s pulse, duty cycle = 1%) IDM 160 A Avalanche Current, L=1mH IAS 14.8 A Avalanche Energy, L=1mH EAS 98 mJ Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = +25C PD 3.2 W Thermal Resistance, Junction to Ambient (Note 5) RθJA 47 °C/W Total Power Dissipation (Note 6) TC = +25C PD 150 W Thermal Resistance, Junction to Case (Note 6) RθJC 1 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 60 - - V VGS = 0V, ID = 1mA Zero Gate Voltage Drain Current IDSS - - 1 μA VDS = 48V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 1 - 3 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) - 4.4 5.5 m Ω VGS = 10V, ID = 50A - 5.7 7.2 VGS = 6V, ID = 20A - 7.7 10 VGS = 4.5V, ID = 12.5A Diode Forward Voltage VSD - 0.9 - V VGS = 0V, IS = 50A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss - 2962 - pF VDS = 30V, VGS = 0V, f = 1MHz Output Capacitance Coss - 965.2 - Reverse Transfer Capacitance Crss - 59.8 - Gate Resistance Rg - 0.66 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 10V) Qg - 47.1 - nC VDD = 30V, ID = 50A Total Gate Charge (VGS = 4.5V) Qg - 23.1 - Gate-Source Charge Qgs - 10.2 - Gate-Drain Charge Qgd - 12.5 - Turn-On Delay Time tD(ON) - 8.3 - ns VDD = 30V, VGS = 10V, ID = 30A, RG = 3.3Ω Turn-On Rise Time tR - 9.4 - Turn-Off Delay Time tD(OFF) - 22 - Turn-Off Fall Time tF - 8.9 - Body Diode Reverse Recovery Time tRR - 40.4 - ns IF = 30A, di/dt = 100A/μs Body Diode Reverse Recovery Charge QRR - 49.7 - nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 9. Package limited. |
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