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DMTH6004SPS датащи(PDF) 2 Page - Diodes Incorporated |
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DMTH6004SPS датащи(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page ![]() DMTH6004SPS Document number: DS37353 Rev. 5 - 2 2 of 7 www.diodes.com November 2015 © Diodes Incorporated DMTH6004SPS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 5) TA = +25°C TA = +70°C ID 25 21 A Continuous Drain Current (Note 6) TC = +25°C (Note 9) ID 100 A TC = +100°C 100 Maximum Continuous Body Diode Forward Current (Note 6) IS 100 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 200 A Avalanche Current, L = 0.2mH IAS 45 A Avalanche Energy, L = 0.2mH EAS 200 mJ Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25°C PD 2.1 W Thermal Resistance, Junction to Ambient (Note 5) RθJA 47 °C/W Total Power Dissipation (Note 6) TC = +25°C PD 167 W Thermal Resistance, Junction to Case (Note 6) RθJC 0.9 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 60 — — V VGS = 0V, ID = 1mA Zero Gate Voltage Drain Current IDSS — — 1 μA VDS = 48V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 2 — 4 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 2.5 3.1 m Ω VGS = 10V, ID = 50A Diode Forward Voltage VSD — 0.9 1.2 V VGS = 0V, IS = 20A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 4556 — pF VDS = 30V, VGS = 0V, f = 1MHz Output Capacitance Coss — 1383 — Reverse Transfer Capacitance Crss — 105.2 — Gate Resistance Rg — 0.66 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg — 95.4 — nC VDD = 30V, ID = 90A, VGS = 10V Gate-Source Charge Qgs — 21.6 — Gate-Drain Charge Qgd — 20.4 — Turn-On Delay Time tD(ON) — 13.2 — ns VDD = 30V, VGS = 10V, ID = 90A, RG = 3.5Ω Turn-On Rise Time tR — 11.7 — Turn-Off Delay Time tD(OFF) — 31 — Turn-Off Fall Time tF — 12 — Body Diode Reverse Recovery Time tRR — 50.5 — ns IF = 50A, di/dt = 100A/μs Body Diode Reverse Recovery Charge QRR — 80.8 — nC Notes: 5. Device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single- sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady state. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 9. Package limited. |
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