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DMTH6004SPS датащи(PDF) 2 Page - Diodes Incorporated

номер детали DMTH6004SPS
подробное описание детали  60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
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DMTH6004SPS датащи(HTML) 2 Page - Diodes Incorporated

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DMTH6004SPS
Document number: DS37353 Rev. 5 - 2
2 of 7
www.diodes.com
November 2015
© Diodes Incorporated
DMTH6004SPS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 5)
TA = +25°C
TA = +70°C
ID
25
21
A
Continuous Drain Current (Note 6)
TC = +25°C
(Note 9)
ID
100
A
TC = +100°C
100
Maximum Continuous Body Diode Forward Current (Note 6)
IS
100
A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
IDM
200
A
Avalanche Current, L = 0.2mH
IAS
45
A
Avalanche Energy, L = 0.2mH
EAS
200
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
TA = +25°C
PD
2.1
W
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
47
°C/W
Total Power Dissipation (Note 6)
TC = +25°C
PD
167
W
Thermal Resistance, Junction to Case (Note 6)
RθJC
0.9
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +175
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
60
—
—
V
VGS = 0V, ID = 1mA
Zero Gate Voltage Drain Current
IDSS
—
—
1
μA
VDS = 48V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
2
—
4
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
—
2.5
3.1
m
Ω
VGS = 10V, ID = 50A
Diode Forward Voltage
VSD
—
0.9
1.2
V
VGS = 0V, IS = 20A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
—
4556
—
pF
VDS = 30V, VGS = 0V,
f = 1MHz
Output Capacitance
Coss
—
1383
—
Reverse Transfer Capacitance
Crss
—
105.2
—
Gate Resistance
Rg
—
0.66
—
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Qg
—
95.4
—
nC
VDD = 30V, ID = 90A,
VGS = 10V
Gate-Source Charge
Qgs
—
21.6
—
Gate-Drain Charge
Qgd
—
20.4
—
Turn-On Delay Time
tD(ON)
—
13.2
—
ns
VDD = 30V, VGS = 10V,
ID = 90A, RG = 3.5Ω
Turn-On Rise Time
tR
—
11.7
—
Turn-Off Delay Time
tD(OFF)
—
31
—
Turn-Off Fall Time
tF
—
12
—
Body Diode Reverse Recovery Time
tRR
—
50.5
—
ns
IF = 50A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
QRR
—
80.8
—
nC
Notes:
5. Device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single- sided 1.6mm FR-4 PCB; device is measured under still air conditions
whilst operating in a steady state.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.



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