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DMTH6004LPS датащи(PDF) 2 Page - Diodes Incorporated |
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DMTH6004LPS датащи(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page ![]() POWERDI is a registered trademark of Diodes Incorporated. DMTH6004LPS Document number: DS37769 Rev. 2 - 2 2 of 7 www.diodes.com December 2015 © Diodes Incorporated DMTH6004LPS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 5) TA = +25C TA = +70C ID 22 16 A Continuous Drain Current (Note 6) TC = +25C ID 100 A TC = +100C (Note 8) 100 Maximum Continuous Body Diode Forward Current (Note 6) IS 100 A Pulsed Drain Current (10 s Pulse, Duty Cycle = 1%) IDM 120 A Avalanche Current, L = 0.2mH IAS 40 A Avalanche Energy, L = 0.2mH EAS 160 mJ Thermal Characteristic Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25C PD 2.6 W Thermal Resistance, Junction to Ambient (Note 5) RθJA 47 °C/W Total Power Dissipation (Note 6) TC = +25C PD 138 W Thermal Resistance, Junction to Case (Note 6) RθJC 0.9 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 60 - - V VGS = 0V, ID = 1mA Zero Gate Voltage Drain Current IDSS - - 1 μA VDS = 48V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 1 - 3 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) - 2.5 3.1 m Ω VGS = 10V, ID = 25A - 3.3 4.5 m Ω VGS = 4.5V, ID = 20A Diode Forward Voltage VSD - - 1.3 V VGS = 0V, IS = 25A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss - 4515 - pF VDS = 30V, VGS = 0V, f = 1MHz Output Capacitance Coss - 1477 - Reverse Transfer Capacitance Crss - 135.3 - Gate Resistance Rg - 0.64 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 10V) Qg - 96.3 - nC VDD = 30V, ID = 25A Total Gate Charge (VGS = 4.5V) Qg - 47.4 - Gate-Source Charge Qgs - 14.1 - Gate-Drain Charge Qgd - 21.4 - Turn-On Delay Time tD(ON) - 9.9 - ns VDD = 30V, VGS = 10V, ID = 25A, RG = 3.5Ω Turn-On Rise Time tR - 17.7 - Turn-Off Delay Time tD(OFF) - 53.5 - Turn-Off Fall Time tF - 32.9 - Body Diode Reverse Recovery Time tRR - 49.7 - ns IF = 25A, di/dt = 100A/μs Body Diode Reverse Recovery Charge QRR - 78.9 - nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. |
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