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DMTH6004LPS датащи(PDF) 2 Page - Diodes Incorporated

номер детали DMTH6004LPS
подробное описание детали  60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMTH6004LPS датащи(HTML) 2 Page - Diodes Incorporated

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POWERDI is a registered trademark of Diodes Incorporated.
DMTH6004LPS
Document number: DS37769 Rev. 2 - 2
2 of 7
www.diodes.com
December 2015
© Diodes Incorporated
DMTH6004LPS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 5)
TA = +25C
TA = +70C
ID
22
16
A
Continuous Drain Current (Note 6)
TC = +25C
ID
100
A
TC = +100C
(Note 8)
100
Maximum Continuous Body Diode Forward Current (Note 6)
IS
100
A
Pulsed Drain Current (10
s Pulse, Duty Cycle = 1%)
IDM
120
A
Avalanche Current, L = 0.2mH
IAS
40
A
Avalanche Energy, L = 0.2mH
EAS
160
mJ
Thermal Characteristic
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
TA = +25C
PD
2.6
W
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
47
°C/W
Total Power Dissipation (Note 6)
TC = +25C
PD
138
W
Thermal Resistance, Junction to Case (Note 6)
RθJC
0.9
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +175
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
60
-
-
V
VGS = 0V, ID = 1mA
Zero Gate Voltage Drain Current
IDSS
-
-
1
μA
VDS = 48V, VGS = 0V
Gate-Source Leakage
IGSS
-
-
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
1
-
3
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
-
2.5
3.1
m
VGS = 10V, ID = 25A
-
3.3
4.5
m
VGS = 4.5V, ID = 20A
Diode Forward Voltage
VSD
-
-
1.3
V
VGS = 0V, IS = 25A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
-
4515
-
pF
VDS = 30V, VGS = 0V,
f = 1MHz
Output Capacitance
Coss
-
1477
-
Reverse Transfer Capacitance
Crss
-
135.3
-
Gate Resistance
Rg
-
0.64
-
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 10V)
Qg
-
96.3
-
nC
VDD = 30V, ID = 25A
Total Gate Charge (VGS = 4.5V)
Qg
-
47.4
-
Gate-Source Charge
Qgs
-
14.1
-
Gate-Drain Charge
Qgd
-
21.4
-
Turn-On Delay Time
tD(ON)
-
9.9
-
ns
VDD = 30V, VGS = 10V,
ID = 25A, RG = 3.5Ω
Turn-On Rise Time
tR
-
17.7
-
Turn-Off Delay Time
tD(OFF)
-
53.5
-
Turn-Off Fall Time
tF
-
32.9
-
Body Diode Reverse Recovery Time
tRR
-
49.7
-
ns
IF = 25A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
QRR
-
78.9
-
nC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.



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