DMN61D8L/LVT

Document number: DS37630 Rev. 3 - 2

5 of 9

www.diodes.com

April 2015

© Diodes Incorporated

DMN61D8L/LVT

T , JUNCTION TEMPERATURE ( C)

J



Figure 7 On-Resistance Variation with Temperature

0

0.5

1

1.5

2

2.5

3

-50

-25

0

25

50

75

100

125

150

V

= 5V

GS

I = 150mA

D

V

= 3V

GS

I = 150mA

D

T , JUNCTION TEMPERATURE ( C)

J



Figure 8 Gate Threshold Variation vs. Ambient Temperature

0.9

1

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

-50

-25

0

25

50

75

100

125

150

I = 1mA

D

I = 250µA

D

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

0

0.2

0.4

0.6

0.8

1

0

0.3

0.6

0.9

1.2

1.5

T = -55°C

A

T = 150°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Junction Capacitance

0

1

10

100

0

5

10

15

20

25

30

35

40

f = 1MHz

Q , TOTAL GATE CHARGE (nC)

g

Figure 11 Gate Charge

0

1

2

3

4

5

6

7

0

0.2

0.4

0.6

0.8

1

1.2

1.4

V

= 12V

DS

I

= 150mA

D