DMN5L06DMKQ datasheet(2/6 Pages) DIODES

2 / 6 page

DMN5L06DMKQ

Document number: DS37964 Rev. 1 - 2

2 of 6

www.diodes.com

June 2015

DMN5L06DMKQ

Maximum Ratings (@TA = +25°C unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain Source Voltage

VDSS

Gate-Source Voltage

VGSS

20

Drain Current (Note 6)

Continuous

Pulsed (Note 7)

305

800

Pulsed (Note 7)

Thermal Characteristics (@TA = +25°C unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 6)

400

Thermal Resistance, Junction to Ambient

RJA

313

°C/W

Operating and Storage Temperature Range

Tj, TSTG

-65 to +150

°C

Electrical Characteristics (@TA = +25°C unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS



VGS = 0V, ID = 10µA

Zero Gate Voltage Drain Current

@ TC = +25°C

IDSS



VDS = 50V, VGS = 0V

Gate-Body Leakage

IGSS



500

A

VGS = ±12V, VDS = 0V

VGS = ±10V, VDS = 0V

VGS = ±5V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(th)

0.49



1.0

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS (ON)









3.0

2.5

2.0

Ω

VGS = 1.8V, ID = 50mA

VGS = 2.5V, ID = 50mA

VGS = 5.0V, ID = 50mA

On-State Drain Current

ID(ON)

0.5

1.4



VGS = 10V, VDS = 7.5V

Forward Transconductance

|Yfs|

200



VDS =10V, ID = 0.2A

Source-Drain Diode Forward Voltage

VSD

0.5



1.4

VGS = 0V, IS = 115mA

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss



VDS = 25V, VGS = 0V

f = 1.0MHz

Output Capacitance

Coss



Reverse Transfer Capacitance

Crss



5.0

Notes:

6. Device mounted on FR-4 PCB.

7. Pulse width

10µS, Duty Cycle 1%.

8. Short duration pulse test used to minimize self-heating effect.

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