NTS10120EMFST3G datasheet(3/5 Pages) ONSEMI

номер детали	NTS10120EMFST3G

подробное описание детали	Very Low Leakage Trench-based Schottky Rectifier

PDF	5 Pages

Scroll/Zoom	100%

производитель	ONSEMI [ON Semiconductor]

домашняя страница	http://www.onsemi.com

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3 / 5 page

NTS10120EMFS, NRVTS10120EMFS

http://onsemi.com

TYPICAL CHARACTERISTICS

Figure 1. Typical Instantaneous Forward

Characteristics

Figure 2. Maximum Instantaneous Forward

Characteristics

VF, INSTANTANEOUS FORWARD VOLTAGE (V)

0.9

0.7

0.4

0.3

0.2

0.1

100

0.7

0.5

0.4

0.3

0.2

0.1

100

Figure 3. Typical Reverse Characteristics

Figure 4. Maximum Reverse Characteristics

VR, INSTANTANEOUS REVERSE VOLTAGE (V)

100

1.E−07

100

1.E−07

Figure 5. Typical Junction Capacitance

Figure 6. Current Derating

VR, REVERSE VOLTAGE (V)

TC, CASE TEMPERATURE (°C)

100

0.1

100

1000

10,000

140

130

120

170

110

0.5 0.6

0.8

0.6

0.9

0.8

110 120

1.E−05

1.E−04

1.E−03

1.E−02

1.E−01

1.E+00

120

110

1.E−04

1.E−03

1.E−02

1.E−01

1.E+00

TA = 125°C

TA = 150°C

TA = −55°C

TA = 25°C

TA = 125°C

TA = 150°C

TA = −55°C

TA = 25°C

TA = 125°C

TA = 150°C

TA = 25°C

TA = 125°C

TA = 150°C

TA = 25°C

TJ = 25°C

Square Wave

RqJC = 1.8°C/W

TA = 175°C

1.E−06

TA = 175°C

1.E−05

1.E−06

150

160

1.0 1.1 1.2 1.3

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